TEMPFET® BTS 100
Electrical Characteristics
at Tj = 25 °C, unless otherwise specified.
Parameter
Symbol
min.
Values
Unit
typ.
max.
Static Characteristics
Drain-source breakdown voltage
VGS = 0, ID = – 0.25 mA
Gate threshold voltage
VGS = VDS, ID = – 1 mA
Zero gate voltage drain current
VGS = 0 V, VDS = – 50 V
Tj = 25 °C
Tj = 150 °C
Gate-source leakage current
VGS = – 20 V, VDS = 0
Tj = 25 °C
Tj = 150 °C
Drain-source on-state resistance
VGS = – 10 V, ID = – 5 A
Dynamic Characteristics
Forward transconductance
VDS ≥ 2 × ID × R , DS(on)max ID = – 5 A
Input capacitance
VGS = 0, VDS = – 25 V, f = 1 MHz
Output capacitance
VGS = 0, VDS = – 25 V, f = 1 MHz
Reverse transfer capacitance
VGS = 0, VDS = – 25 V, f = 1 MHz
Turn-on time ton, (ton = td(on) + tr)
VCC = – 30 V, VGS = – 10 V, ID = – 2.9 A,
RGS = 50 Ω
Turn-off time toff, (toff = td(off) + tf)
VCC = – 30 V, VGS = – 10 V, ID = – 2.9 A,
RGS = 50 Ω
V(BR)DSS
VGS(th)
I DSS
I GSS
RDS(on)
– 50
– 2.5
–
–
–
–
–
V
–
–
– 3.0 – 3.5
µA
–1
– 100
– 10
– 300
– 10
– 100 nA
–2
–4
µA
Ω
0.25
0.3
gfs
S
1.5
2.3
4.0
Ciss
pF
–
900
1200
Coss
–
350
550
Crss
–
130
230
td(on)
–
tr
–
20
30
ns
60
95
td(off)
–
tf
–
70
90
55
75
2
04.96