IRF351 查看數據表（PDF） - Intersil
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IRF351 Datasheet PDF : 7 Pages
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IRF350
Source to Drain Diode Specifications
PARAMETER
Continuous Source to Drain Current
Pulse Source to Drain Current
(Note 3)
SYMBOL
TEST CONDITIONS
ISD
ISDM
Modified MOSFET
Symbol Showing the In-
tegral Reverse P-N
D
Junction Diode
G
MIN TYP
-
-
-
-
MAX
15
60
UNITS
A
A
S
Source to Drain Diode Voltage (Note 2)
Reverse Recovery Time
Reverse Recovered Charge
VSD
trr
QRR
TJ = 25oC, ISD = 15A, VGS = 0V, (Figure 13)
TJ = 150oC, ISD = 15A, dISD/dt = 100A/µs
TJ = 150oC, ISD = 15A, dISD/dt = 100A/µs
-
-
1.6
V
-
1000
-
ns
-
6.6
-
µC
NOTES:
2. Pulse Test: Pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive Rating: Pulse width is limited by Maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. VDD = 40V, starting TJ = 25oC, L = 5.66µH, RG = 50Ω, peak IAS = 15A. (Figures 15, 16).
Typical Performance Curves Unless Otherwise Specified
1.2
1.0
0.8
0.6
0.4
0.2
0
0
50
100
150
TC, CASE TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
20
16
12
8
4
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
1.0
0.5
0.2
0.1
0.1
0.05
0.02
0.01
SINGLE PULSE
0.0110-5
10-4
10-3
10-2
0.1
t1, RECTANGULAR PULSE DURATION (S)
PDM
tt12t2
NOTES:
DUTY FACTOR: D = t1/t2
TJ = PD x ZθJC x RθJC + TC
1
10
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
3
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