R1211X 查看數據表（PDF） - RICOH Co.,Ltd.
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R1211X Datasheet PDF : 40 Pages
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R1211x
TYPICAL APPLICATIONS AND TECHNICAL NOTES
<R1211x002A/R1211x002C>
Inductor
Diode VOUT
C1
C2
VIN
DELAY
EXT
VFB
GND AMPOUT
NMOS
C4
R3
C5 R4
R1
C3
R2
NMOS : IRF7601 (International Rectifier)
Inductor : LDR655312T-100 10µH (TDK) for R1211x002A
: LDR655312T-220 22µH (TDK) for R1211x002C
Diode : CRS02 (Toshiba)
C1 : 4.7µF (Ceramic)
C2 : 0.22µF (Ceramic)
C3 : 10µF (Ceramic)
C4 : 680pF (Ceramic)
C5 : 2200pF (Ceramic)
R1 : Output Voltage Setting Resistor 1
R2 : Output Voltage Setting Resistor 2
R3 : 30kΩ
R4 : 30kΩ
<R1211x002B/R1211x002D>
Inductor
Diode
VOUT
C1
C2
VIN
EXT
DELAY VFB
GND CE
NMOS
C4
R3
R1
C3
R2
CE Control
NMOS : IRF7601 (International Rectifier)
Inductor : LDR655312T-100 10µH (TDK) for R1211x002B
: LDR655312T-220 22µH (TDK) for R1211x002D
Diode : CRS02 (Toshiba)
C1 : 4.7µF (Ceramic)
C2 : 0.22µF (Ceramic)
C3 : 10µF (Ceramic)
C4 : 680pF (Ceramic)
R1 : Setting Output Voltage Resistor 1
R2 : Setting Output Voltage Resistor 2
R3 : 30kΩ
[Note]
These example circuits may be applied to the output voltage requirement is 15V or less. If the output voltage
requirement is 15V or more, ratings of NMOS and diode as shown above is over the limit, therefore, choose
other external components.
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