ADG511BRZ-REEL 查看數據表（PDF） - Analog Devices

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ADG511BRZ-REEL

LC2MOS Precision 5 V/3 V Quad SPST Switches

Analog Devices 

ADG511/ADG512/ADG513–SPECIFICATIONS1

Single Supply (VDD = 3.3 V ؎ 10%, VSS = 0 V, GND = 0 V, unless otherwise noted)

Parameter

B Version

0؇C to

25؇C

70؇C

Unit

ANALOG SWITCH

Analog Signal Range

RON

0 V to VDD

V

200

Ω typ

500

Ω max

LEAKAGE CURRENTS

Source OFF Leakage IS (OFF)

± 0.025

± 0.1

± 2.5

Drain OFF Leakage ID (OFF)

± 0.025

± 0.1

± 2.5

Channel ON Leakage ID, IS (ON)

± 0.05

± 0.2

±5

nA typ

nA max

nA typ

nA max

nA typ

nA max

DIGITAL INPUTS

Input High Voltage, VINH

Input Low Voltage, VINL

Input Current

IINL or IINH

2.4

0.8

0.005

± 0.1

V min

V max

µA typ

µA max

DYNAMIC CHARACTERISTICS2

tON

600

tOFF

100

Break-Before-Make Time

500

Delay, tD (ADG513 Only)

Charge Injection

11

1200

160

ns typ

ns max

ns typ

ns max

ns typ

pC typ

OFF Isolation

68

dB typ

Channel-to-Channel Crosstalk

85

dB typ

CS (OFF)

CD (OFF)

CD, CS (ON)

POWER REQUIREMENTS

VDD

IDD

9

9

35

0.0001

NOTES

1Temperature range is as follows: B Version –40°C to +85°C.

2Guaranteed by design, not subject to production test.

Specifications subject to change without notice.

3/3.6

1

pF typ

pF typ

pF typ

V min/max

µA typ

µA max

Test Conditions/Comments

VD = 1.5 V, IS = –1 mA;

VDD = 3 V

VDD = 3.6 V

VD = 2.6/1 V, VS = 1ր2.6 V;

Test Circuit 2

VD = 2.6/1 V, VS = 1ր2.6 V;

Test Circuit 2

VD = VS = 2.6 V/1 V;

Test Circuit 3

VIN = VINL or VINH

RL = 300 Ω, CL = 35 pF;

VS = 1 V; Test Circuit 4

RL = 300 Ω, CL = 35 pF;

VS = 1 V; Test Circuit 4

RL = 300 Ω, CL = 35 pF;

VS1 = VS2 = 1 V; Test Circuit 5

VS = 0 V, RS = 0 Ω, CL = 10 nF;

Test Circuit 6

RL = 50 Ω, CL = 5 pF, f = 1 MHz;

Test Circuit 7

RL = 50 Ω, CL = 5 pF, f = 1 MHz;

Test Circuit 8

f = 1 MHz

f = 1 MHz

f = 1 MHz

VDD = 3.6 V

Digital Inputs = 0 V or 3 V

–4–

REV. C

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