PSD55 查看數據表（PDF） - Powersem GmbH
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PSD55 Datasheet PDF : 2 Pages
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PSD 55
60
A T=150°C
50
40
30
20
10
T=25°C
IF
0
VF
1 V 1.5
Fig. 1 Forward current versus
voltage drop per diode
I-IFF-S(-MO-V-)-
1.6
1.4
IFSM (A)
TVJ=45°C TVJ=150°C
750
670
4
10
A2s
TVJ=45°C
1.2
3
10
TVJ=150°C
1
0.8
0.6
0.4
100
0 VRRM
1/2 VRRM
1 VRRM
101 t[ms] 102
2
10
1
103
2
46
10
t [ms]
Fig. 2 Surge overload current
per diode IFSM: Crest value.
t: duration
Fig. 3 ∫i2dt versus time
(1-10ms) per diode (or thyristor)
200
[W] PSD 55
175
150
125
100
75
50
25
PVTOT
0
10
IFAVM
DC
sin.180°
rec.120°
rec.60°
rec.30°
30
50 0
[A]
0.17 0.05
0.3
0.55
1.05
2.55
50
Tamb
T66C05
= RTHCA [K/W] 70
75
80
85
90
95
100
105
110
115
120
125
130
135
140
100
°1145C50
150
[K]
Fig. 4 Power dissipation versus direct output current and ambient
temperature
70
[A]
50
30
DC
sin.180°
rec.120°
rec.60°
rec.30°
10
IdAV
0
50
100 150 200
TC(°C)
Fig.5 Maximum forward current
at case temperature
4
K/W
3
Z thJK
ZthJC
2
1
Zth
0.01
0.1
1
10
t[s]
Fig. 6 Transient thermal impedance per diode (or thyristor),
calculated
POWERSEM GmbH, Walpersdorfer Str. 53
91126 D- Schwabach
Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20
2003 POWERSEM reserves the right to change limits, test conditions and dimensions
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