datasheetbank_Logo
数据手册搜索引擎和 Datasheet免费下载 PDF

1N5807(1999) 查看數據表(PDF) - Microsemi Corporation

零件编号
产品描述 (功能)
比赛名单
1N5807
(Rev.:1999)
Microsemi
Microsemi Corporation Microsemi
1N5807 Datasheet PDF : 3 Pages
1 2 3
7516 Central Industrial Drive
Riviera Beach, Florida
33404
PHONE: (561) 842-0305
FAX: (561) 845-7813
FEATURES:
Chip Outline Dimensions: 68 x 68 mils
Chip Thickness: 8 to 12 mils
Anode Metallization: Aluminum
Metallization Thickness: 70,000Ã Nominal
Bonding Area: 42 x 42 mils Min.
Back Metallization: Gold-3000Ã Nominal
Junction Passivated with Thermal Silicon Dioxide - Planar Design
Backside Available with Solderable Ag Backside as JANHCF or
JANKCF
TYPE
JANHCE1N5807
JANHCE1N5809
JANHCE1N58011
JANKCE1N5807
JANKCE1N5809
JANKCE1N58011
VR
50V
100V
150V
50V
100V
150V
VBR
60V
110V
160V
60V
110V
160V
IO Tj = 75° C
6.0A
6.0A
6.0A
6.0A
6.0A
6.0A
1N5807
1N5809
1N5811
JANHCE and JANKCE
JANHCF and JANKCF
6 AMPS
FAST RECOVERY
RECTIFIER CHIP
50 - 150 VOLTS
Chip Type: RA
A
ELECTRICAL CHARACTERISTICS:
CHARACTERISTIC
Reverse Current
Rated VR, TC = 25° C
Reverse Current
Rated VR, TC = 100° C
Forward Voltage Drop IF = 4A, TC = 25° C
Junction Capacitance @ VR = 10V
SYMBOL TYPICAL
IR
.01
IR
1.0
VF
.84
Cj
45
MAX.
5
150
.875
60
UNITS
µA
µA
Volts
Pf
REVERSE RECOVERY CHARACTERISTICS:
CHARACTERISTIC
SYMBOL
Reverse Recovery Time
IF = 1A, IR = 1A, IRR = 0.1A
Trr
TYPICAL
2.5
Forward Recovery Voltage @ 1A Tr = 8ns
Forward Recovery Time
IFM = 500 mA
Vrr
1.5
MAX.
30
2.2
15
UNITS
ns
V
ns
MSC1345.PDF 02-23-99

Share Link: 

datasheetbank.com [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]