P4C188L 查看數據表（PDF） - Performance Semiconductor
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P4C188L Datasheet PDF : 8 Pages
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P4C188/188L
AC CHARACTERISTICS—READ CYCLE
(VCC = 5V ± 10%, All Temperature Ranges)(2)
Sym.
Parameter
-10
-12
-15
-20
-25
-35
-45
Unit
Min Max Min Max Min Max Min Max Min Max Min Max Min Max
tRC Read Cycle Time 10
12
15
20
25
35
45
ns
t
Address Access
10
12
15
20
25
35
45 ns
AA
Time
tAC Chip Enable
Access Time
10
12
15
20
25
35
45 ns
tOH Output Hold from 2
2
2
2
2
2
2
ns
Address Change
t
Chip Enable to 2
2
2
3
3
3
3
ns
LZ
Output in Low Z
tHZ Chip Disable to
5
6
6
8
10
20
25 ns
Output in High Z
tPU Chip Enable to
0
0
0
0
0
0
0
ns
Power Up Time
t
Chip Disable to
10
12
15
20
25
35
45 ns
PD
Power Down
Time
TIMING WAVEFORM OF READ CYCLE NO. 1(5)
ADDRESS
DATA OUT
t AA
t OH
PREVIOUS DATA VALID
(8)
t RC
DATA VALID
TIMING WAVEFORM OF READ CYCLE NO. 2(6)
tRC
CE
DATA OUT
VCC SUPPLY I CC
CURRENT I SB
t AC
(7)
t LZ
t PU
tHZ (7)
DATA VALID
t PD
HIGH IMPEDANCE
Notes:
5. CE is LOW and WE is HIGH for READ cycle.
6. WE is HIGH, and address must be valid prior to or coincident with CE
transition LOW.
7. Transition is measured ±200mV from steady state voltage prior to
change with specified loading in Figure 1. This parameter is sampled
and not 100% tested.
8. Read Cycle Time is measured from the last valid address to the first
transitioning address.
66
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