2SK2699(F,T)(2006) 查看數據表（PDF） - Toshiba

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比赛名单

2SK2699(F,T)
(Rev.:2006)

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)

Toshiba 

2SK2699

RG = 25 Ω

VDD = 90 V, L = 7.35 mH

EAS

=

1

2

⋅ L ⋅ I2

⋅ ⎜⎛

⎝

BVDSS

BVDSS − VDD

⎟⎞

⎠

5

2006-11-08

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