AP15N03H 查看數據表（PDF） - Advanced Power Electronics Corp
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AP15N03H
Advanced Power Electronics Corp
AP15N03H Datasheet PDF : 6 Pages
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Advanced Power
Electronics Corp.
AP15N03H/J
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low Gate Charge
▼ Simple Drive Requirement
▼ Fast Switching
Description
D
G
S
The TO-252 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(AP15N03J) is available for low-profile applications.
BVDSS
RDS(ON)
ID
30V
80mΩ
15A
G D S TO-252(H)
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25℃
ID@TC=100℃
IDM
PD@TC=25℃
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-case
Thermal Resistance Junction-case
Rthj-amb
Thermal Resistance Junction-ambient
G
D
S
TO-251(J)
Rating
30
± 20
15
9
50
28
0.22
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
℃
℃
Max.
Max.
Value
4.8
110
Unit
℃/W
℃/W
Data & specifications subject to change without notice
200227032
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