15N03J 查看數據表（PDF） - Advanced Power Electronics Corp

零件编号

产品描述 (功能)

比赛名单

15N03J

AP15N03H, AP15N03J, 15N03H / N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power Electronics Corp 

AP15N03H/J

Electrical Characteristics@Tj=25oC(unless otherwise specified)

Symbol

Parameter

Test Conditions

Min. Typ. Max. Units

BVDSS

ΔBVDSS/ΔTj

RDS(ON)

VGS(th)

gfs

IDSS

IGSS

Qg

Qgs

Qgd

td(on)

tr

td(off)

tf

Ciss

Coss

Crss

Drain-Source Breakdown Voltage VGS=0V, ID=250uA

Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA

Static Drain-Source On-Resistance VGS=10V, ID=8A

VGS=4.5V, ID=6A

Gate Threshold Voltage

Forward Transconductance

Drain-Source Leakage Current (Tj=25oC)

Drain-Source Leakage Current (Tj=150oC)

Gate-Source Leakage

Total Gate Charge2

Gate-Source Charge

Gate-Drain ("Miller") Charge

Turn-on Delay Time2

Rise Time

Turn-off Delay Time

VDS=VGS, ID=250uA

VDS=10V, ID=18A

VDS=30V, VGS=0V

VDS=24V, VGS=0V

VGS= ± 20V

ID=8A

VDS=24V

VGS=5V

VDS=15V

ID=8A

RG=3.4Ω,VGS=10V

Fall Time

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

RD=1.9Ω

VGS=0V

VDS=25V

f=1.0MHz

30 -

-

V

- 0.037 - V/℃

-

- 80 mΩ

-

- 100 mΩ

1

-

3

V

- 16 -

S

`

-

1 uA

-

- 25 uA

-

- ±100 nA

- 4.6

nC

- 1.1

nC

-

3

nC

- 4.9 - ns

- 22.5 - ns

- 12.2 - ns

- 3.3 - ns

- 160 - pF

- 107 - pF

- 32 - pF

Source-Drain Diode

Symbol

Parameter

IS

Continuous Source Current ( Body Diode )

ISM

Pulsed Source Current ( Body Diode )1

VSD

Forward On Voltage2

Test Conditions

VD=VG=0V , VS=1.3V

Tj=25℃, IS=15A, VGS=0V

Min. Typ. Max. Units

-

- 15 A

-

- 50 A

-

- 1.3 V

Notes:

1.Pulse width limited by safe operating area.

2.Pulse width <300us , duty cycle <2%.

Share Link: