W14NK50Z 查看數據表（PDF） - Unspecified

零件编号

产品描述 (功能)

比赛名单

W14NK50Z

N-channel 500V - 0.34Ω - 14A TO-220/FP/D2PAK/I2PAK/TO-247 Zener-protected SuperMESHTM Power MOSFET

Unspecified 

Electrical ratings STP14NK50Z - STP14NK50ZFP - STB14NK50Z - STB14NK50Z-1 - STW14NK50Z

Table 3. Avalanche characteristics

Symbol

Parameter

Avalanche current, repetitive or not-repetitive

IAR

(pulse width limited by Tj Max)

Single pulse avalanche energy

EAS

(starting Tj=25°C, Id=Iar, Vdd=50V)

Value

Unit

12

A

400

mJ

Table 4. Gate-source zener diode

Symbol

Parameter

Test conditions

BVGSO

Igs=±1mA

Gate-source breakdown voltage

(Open Drain)

Min. Typ. Max. Unit

30

V

1.1

Protection features og gate-to-source zener diodes

The built-in back-to-back Zener diodes have specifically been designed to enhance not only

the device’s ESD capability, but also to make them safely absorb possible voltage transients

that may occasionally be applied from gate to source. In this respect the Zener voltage is

appropriate to achieve an efficient and cost-effective intervention to protect the device’s

integrity. These integrated Zener diodes thus avoid the usage of external components.

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