85T03J 查看數據表（PDF） - Advanced Power Electronics Corp
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85T03J Datasheet PDF : 6 Pages
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Advanced Power
Electronics Corp.
AP85T03GH/J
RoHS-compliant Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low Gate Charge
D
▼ Simple Drive Requirement
▼ Fast Switching
G
S
BVDSS
RDS(ON)
ID
30V
6mΩ
75A
Description
The TO-252 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP85T03GJ) is
available for low-profile applications.
G D S TO-252(H)
G
D
S
TO-251(J)
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25℃
ID@TC=100℃
IDM
PD@TC=25℃
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Rating
30
+20
75
55
350
107
0.7
-55 to 175
-55 to 175
Value
1.4
110
Units
V
V
A
A
A
W
W/℃
℃
℃
Units
℃/W
℃/W
Data & specifications subject to change without notice
1
200810235
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