AP9916J 查看數據表（PDF） - Advanced Power Electronics Corp
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AP9916J Datasheet PDF : 6 Pages
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Advanced Power
Electronics Corp.
AP9916H/J
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low on-resistance
D
▼ Capable of 2.5V gate drive
▼ Low drive current
G
▼ Single Drive Requirement
S
Description
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
BVDSS
RDS(ON)
ID
18V
25mΩ
35A
GD S
TO-252(H)
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25℃
ID@TC=125℃
IDM
PD@TC=25℃
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-c
Thermal Resistance Junction-case
Rthj-a
Thermal Resistance Junction-ambient
GD
S
TO-251(J)
Rating
18
± 12
35
16
90
50
0.4
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
℃
℃
Max.
Max.
Value
2.5
110
Unit
℃/W
℃/W
Data and specifications subject to change without notice
200227032
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