9997GH(2010) 查看數據表（PDF） - Advanced Power Electronics Corp
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9997GH Datasheet PDF : 4 Pages
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20
T C = 25 o C
16
12
10 V
7 .0 V
5.0 V
4.5 V
8
4
V G = 3 .0V
0
0
1
2
3
4
5
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
150
I D =8A
140
T C =25 o C
130
120
110
100
90
2
4
6
8
10
V GS Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
10
8
6
T j =150 o C
T j =25 o C
4
2
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
AP9997GH/J-HF
20
T C = 150 o C
16
12
10 V
7 .0 V
5.0 V
4.5 V
8
4
V G = 3.0 V
0
0
2
4
6
8
10
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
2.4
I D =8A
V G =10V
2.0
1.6
1.2
0.8
0.4
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
1.2
0.8
0.4
0.0
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
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