AP9T15J 查看數據表（PDF） - Advanced Power Electronics Corp
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AP9T15J Datasheet PDF : 4 Pages
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50
T C =25 o C
40
5.0V
4.5V
30
3.5V
20
2.5V
10
V G =1.5V
0
0
1
2
3
4
5
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
45
43
I D = 5.2 A
T C =25 o C
41
39
37
35
33
0
2
4
6
8
10
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
10
8
6
T j =150 o C
4
T j =25 o C
2
0
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
AP9T15GH/J
40
T C = 150 o C
30
20
5.0V
4.5V
3.5V
10
2.5V
V G =1.5V
0
0
1
2
3
4
5
6
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1.8
I D =6A
1.6
V G =4.5V
1.4
1.2
1.0
0.8
0.6
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.0
1.5
1.0
0.5
0.0
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3/4
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