SSM02N60P 查看數據表（PDF） - Silicon Standard Corp.
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SSM02N60P Datasheet PDF : 6 Pages
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SSM02N60P
16
I D =2A
14
12
10
V DS =320V
V DS =400V
V DS =480V
8
6
4
2
0
0
2
4
6
8
10
12
14
16
18
20
Q G , Total Gate Charge (nC)
Fig 9. Gate Charge Characteristics
f=1.0MHz
1000
Ciss
100
Coss
Crss
10
1
5
9
13
17
21
25
29
V DS (V)
Fig 10. Typical Capacitance Characteristics
100
10
T j = 150 o C
T j = 25 o C
1
0.1
0
0.2
0.4
0.6
0.8
1
V SD (V)
1.2
1.4
1.6
Fig 11. Forward Characteristic of
Reverse Diode
5
4
3
2
1
0
-50
0
50
100
150
T j , Junction Temperature ( o C )
Fig 12. Gate Threshold Voltage vs.
Junction Temperature
Rev.2.01 6/06/2003
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