PTB20030 查看數據表（PDF） - Ericsson

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比赛名单

PTB20030

15 Watts, 420–470 MHz RF Power Transistor

Ericsson  

PTB 20030

Electrical Characteristics (100% Tested)

Characteristic

Breakdown Voltage C to E

Breakdown Voltage C to E

Breakdown Voltage E to B

DC Current Gain

Conditions

Ib = 0 A, IC = 40 mA, RBE = 22 Ω

VBE = 0 V, IC = 40 mA

IC = 0 A, IE = 5 mA

VCE = 5 V, IC = 0.4 A

Symbol

V(BR)CER

V(BR)CES

V(BR)EBO

hFE

Min

50

55

3.5

20

RF Specifications (100% Tested)

Characteristic

Gain

(VCC = 24 Vdc, Pout = 15 W, ICQ = 200 mA, f = 420 MHz)

Collector Efficiency

(VCC = 24 Vdc, Pout = 15 W, ICQ = 200 mA, f = 420 MHz)

Intermodulation Distortion

(VCC = 24 Vdc, Pout = 15 W(PEP), ICQ = 200 mA,

f1 = 469 MHz, f2 = 470 MHz)

Load Mismatch Tolerance

(VCC = 24 Vdc, Pout = 15 W, ICQ = 200 mA,

f = 420 MHz—all phase angles at frequency of test)

Symbol Min

Gpe

11.0

ηC

50

IMD

—

Ψ

—

Impedance Data (data shown for fixed-tuned broadband circuit)

(VCC = 24 Vdc, Pout = 15 W, ICQ = 200 mA)

Z Source

Z Load

e

Typ Max Units

65

—

Volts

70

—

Volts

5

—

Volts

50

120

—

Typ Max Units

13.0

—

dB

—

—

%

-28

—

dBc

—

10:1

—

Frequency

MHz

420

450

470

Z Source

R

jX

4.0

-2.2

5.4

-3.9

4.9

-5.7

Z Load

R

jX

7.2

-1.0

6.8

-3.0

6.6

-4.3

2

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