16N50 查看數據表（PDF） - Unisonic Technologies
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16N50 Datasheet PDF : 6 Pages
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16N50
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Continuous (TC=25°C)
Pulsed (Note 3)
Avalanche Energy
Single Pulsed (Note 4)
Peak Diode Recovery dv/dt (Note 5)
VDSS
VGSS
ID
IDM
EAS
dv/dt
500
±30
16 (Note 2)
64 (Note 2)
780
4.5
V
V
A
A
mJ
V/ns
Power Dissipation (TC=25°C)
Linear Derating Factor above
TO-220F1
TO-220F2
TO-220F1
PD
TC=25°C
TO-220F2
52
62
W
0.41
0.31
W/°C
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Drain current limited by maximum junction temperature
3. Repetitive Rating: Pulse width limited by maximum junction temperature
4. L = 6.1mH, IAS = 16A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
5. ISD ≤ 16A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
THERMAL DATA
Junction to Ambient
Junction to Case
PARAMETER
TO-220F1
TO-220F2
SYMBOL
θJA
θJC
RATINGS
62.5
2.4
2.0
UNIT
°C/W
°C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 6
QW-R502-532.F
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