K3212 查看數據表（PDF） - Hitachi -> Renesas Electronics

零件编号

产品描述 (功能)

比赛名单

K3212

Silicon N Channel MOS FET High Speed Switching

Hitachi -> Renesas Electronics 

2SK3212

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Drain to source voltage

Gate to source voltage

Drain current

Drain peak current

Body-drain diode reverse drain current

Avalanche current

Avalanche energy

Channel dissipation

VDSS

VGSS

ID

I Note1

D(pulse)

I DR

I Note3

AP

E Note3

AR

Pch Note2

Channel temperature

Tch

Storage temperature

Tstg

Note:

1. PW ≤ 10 µs, duty cycle ≤ 1%

2. Value at Tc = 25°C

3. Value at Tch = 25°C, Rg ≥ 50 Ω

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min Typ

Drain to source breakdown voltage V(BR)DSS 100 —

Gate to source breakdown voltage V(BR)GSS ±20 —

Gate to source leak current

I GSS

—

—

Zero gate voltege drain current

I DSS

—

—

Gate to source cutoff voltage

VGS(off)

1.0

—

Static drain to source on state

RDS(on)

—

100

resistance

RDS(on)

—

130

Forward transfer admittance

|yfs|

4.5 7.5

Input capacitance

Ciss —

420

Output capacitance

Coss —

185

Reverse transfer capacitance

Crss —

100

Turn-on delay time

t d(on)

—

12

Rise time

tr

—

60

Turn-off delay time

t d(off)

—

105

Fall time

tf

—

70

Body–drain diode forward voltage VDF

—

0.9

Body–drain diode reverse

recovery time

t rr

—

90

Note: 4. Pulse test

Ratings

100

±20

10

40

10

10

10

20

150

–55 to +150

Max Unit

—

V

—

V

±10 µA

10

µA

2.5 V

130 mΩ

180 mΩ

—

S

—

pF

—

pF

—

pF

—

ns

—

ns

—

ns

—

ns

—

V

—

ns

Unit

V

V

A

A

A

A

mJ

W

°C

°C

Test Conditions

ID = 10 mA, VGS = 0

IG = ±100 µA, VDS = 0

VGS = ±16 V, VDS = 0

VDS = 100 V, VGS = 0

ID = 1 mA, VDS = 10 V

ID = 5 A, VGS = 10 VNote4

ID = 5 A, VGS = 4 V Note4

ID = 5 A, VDS = 10 V Note4

VDS = 10 V

VGS = 0

f = 1 MHz

ID = 5 A, VGS = 10 V

RL = 10 Ω

IF = 10 A, VGS = 0

IF = 10 A, VGS = 0

diF/ dt = 50 A/ µs

2

Share Link: