5302 查看數據表（PDF） - Unisonic Technologies

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5302

HIGH VOLTAGE NPN TRANSISTOR

Unisonic Technologies 

5302

NPN SILICON TRANSISTOR

„ ELECTRICAL CHARACTERISTICS (Ta = 25°С, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

BVCEO IC=10mA, IE=0 (Note)

400

Collector-Base Breakdown Voltage

BVCBO IC=1mA, IB=0

800

Emitter-Base Breakdown Voltage

BVEBO IE=1mA, IC=0

10

Collector Cutoff Current

ICBO VCB=800V, IE=0

Emitter Cutoff Current

ON CHARACTERISTICS

IEBO VEB=9V, IC=0

DC Current Gain

hFE1 VCE=5V, IC=10mA

10

hFE2 VCE=5V, IC=400mA

10

hFE3 VCE=5V, IC=1A

5

Collector-Emitter Saturation Voltage

VCE(SAT1) IC=0.5A, IB=0.1A (Note)

VCE(SAT2) IC=1A, IB=0.25A (Note)

Base-Emitter Saturation Voltage

SWITCHING CHARACTERISTICS

VBE(SAT1) IC=0.5A, IB=0.1A (Note)

VBE(SAT2) IC=1A, IB=0.25A (Note)

Turn On Time

tON

Fall Time

tF

Storage Time

tSTG

Note: Pulsed duration = 300μS, Duty cycle≤2%

VCC=250V, IC=1A,

IB1=IB2=0.2A, tP=25uS

Duty Cycle<1%

TYP

1.1

0.15

0.2

0.5

MAX UNIT

V

V

V

1

μA

1

μA

30

0.5

V

1.5

1.1

V

1.2

0.3 μS

0.4 μS

0.9 μS

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

3 of 4

QW-R213-020.A

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