73120 查看數據表（PDF） - Vishay Semiconductors

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73120

N-Channel 25-V (D-S) MOSFET

Vishay Semiconductors 

SPICE Device Model Si1404DH

Vishay Siliconix

SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Conditions

Static

Gate Threshold Voltage

On-State Drain Currenta

Drain-Source On-State Resistancea

VGS(th)

ID(on)

rDS(on)

Forward Transconductancea

gfs

Diode Forward Voltagea

VSD

Dynamicb

Total Gate Charge

Qg

Gate-Source Charge

Qgs

Gate-Drain Charge

Qgd

Turn-On Delay Time

td(on)

Rise Time

tr

Turn-Off Delay Time

td(off)

Fall Time

tf

Notes

a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%.

b. Guaranteed by design, not subject to production testing.

VDS = VGS, ID = 250 µA

VDS = 5 V, VGS = 4.5 V

VGS = 4.5 V, ID = 1.57 A

VGS = 2.5 V, ID = 1.39 A

VDS = 15 V, ID = 0.75 A

IS = 1.23 A, VGS = 0 V

VDS = 15 V, VGS = 4.5 V, ID = 1.57 A

VDD = 15 V, RL = 20 Ω

ID ≅ 0.75 A, VGEN = 4.5 V, RG = 6 Ω

Simulated Measured

Data

Data

1

11

0.28

0.28

0.33

0.36

2.3

1.5

0.76

0.85

1

1.3

0.31

0.31

0.49

0.49

12

11

15

18

19

17

21

11

Unit

V

A

Ω

S

V

nC

ns

www.vishay.com

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Document Number: 73120

27-Aug-04

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