A428316S-25 查看數據表（PDF） - AMIC Technology

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A428316S-25

256K X 16 CMOS DYNAMIC RAM WITH EDO PAGE MODE

AMIC Technology 

A428316 Series

Truth Table

Function

Standby

Read: Word

Read: Lower Byte

RAS UCAS LCAS WE

OE

H

H

H

X

X

L

L

L

H

L

L

H

L

H

L

Read: Upper Byte

L

L

H

H

L

Write: Word

Write: Lower Byte

L

L

L

L

H

L

H

L

L

H

Write: Upper Byte

L

L

H

L

H

Read-Write

L

L

L

H→L L→H

EDO-Page-Mode Read: Hi-Z

-First cycle

L

H→L H→L

H

H→L

-Subsequent Cycles

L

H→L H→L

H

H→L

EDO-Page-Mode Write

-First cycle

L

H→L H→L

L

H

-Subsequent Cycles

L

H→L H→L

L

H

EDO-Page-Mode Read-Write

-First cycle

L

H→L H→L H→L L→H

-Subsequent Cycles

L

H→L H→L H→L L→H

Hidden Refresh Read

L→H→L L

L

H

L

Hidden Refresh Write

L→H→L L

L

L

X

RAS -Only Refresh

L

H

H

X

X

CBR Refresh

H→L

L

L

X

X

Note: 1. Byte Write may be executed with either UCAS or LCAS active.

2. Byte Read may be executed with either UCAS or LCAS active.

3. Only one CAS signal (UCAS or LCAS ) must be active.

Address

X

Row/Col.

Row/Col.

Row/Col.

Row/Col.

Row/Col.

Row/Col.

Row/Col.

I/Os

High-Z

Data Out

I/O0-7 = Data Out

I/O8-15 = High-Z

Notes

I/O0-7 = High-Z

I/O8-15 = Data Out

Data In

I/O0-7 = Data In

I/O8-15 = X

I/O0-7 = X

I/O8-15 = Data In

Data Out → Data In 1,2

Row/Col.

Data Out

2

Col.

Data Out

2

Row/Col.

Data In

1

Col.

Data In

1

Row/Col. Data Out → Data In 1, 2

Col.

Data Out → Data In 1, 2

Row/Col.

Data Out

2

Row/Col. Data In → High-Z

1

Row

High-Z

X

High-Z

3

(February, 2009, Version 1.2)

4

AMIC Technology, Corp.

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