GS88219AB-250 查看數據表（PDF） - Giga Semiconductor
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GS88219AB-250 Datasheet PDF : 41 Pages
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Preliminary
GS88219/37AB-250/225/200/166/150/133
Mode Pin Functions
Mode Name
Pin
Name
State
Function
Burst Order Control
LBO
L
H
Linear Burst
Interleaved Burst
Power Down Control
L or NC
ZZ
H
Active
Standby, IDD = ISB
Single/Dual Cycle Deselect Control
SCD
L
H or NC
Dual Cycle Deselect
Single Cycle Deselect
FLXDrive Output Impedance Control
ZQ
L
H or NC
High Drive (Low Impedance)
Low Drive (High Impedance)
Note:
Thereis a pull-down device on the ZZ pin, so this input pin can be unconnected and the chip will operate in the default states as specified in the
above tables.
Enable / Disable Parity I/O Pins
This SRAM allows the user to configure the device to operate in Parity I/O active (x18, x36, or x72) or in Parity I/O inactive (x16,
x32, or x64) mode. Holding the PE bump low or letting it float will activate the 9th I/O on each byte of the RAM. Grounding PE
deactivates the 9th I/O of each byte.
Burst Counter Sequences
Linear Burst Sequence
A[1:0] A[1:0] A[1:0] A[1:0]
1st address
00
01
10
11
2nd address
01
10
11
00
3rd address
10
11
00
01
4th address
11
00
01
10
Note: The burst counter wraps to initial state on the 5th clock.
Interleaved Burst Sequence
A[1:0] A[1:0] A[1:0] A[1:0]
1st address
00
01
10
11
2nd address
01
00
11
10
3rd address
10
11
00
01
4th address
11
10
01
00
Note: The burst counter wraps to initial state on the 5th clock.
BPR 1999.05.18
Rev: 1.00 3/2002
8/36
© 2002, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
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