FB10R06KL4GB1 查看數據表（PDF） - eupec GmbH
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FB10R06KL4GB1 Datasheet PDF : 12 Pages
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Technische Information / technical information
IGBT-Module
IGBT-Modules
FB10R06KL4GB1
Modul Isolation / module isolation
Isolations-Prüfspannung
insulation test voltage
RMS, f = 50 Hz, t = 1 min.
NTC connected to baseplate
Vorläufig
preliminary
VISOL
2,5
kV
Elektrische Eigenschaften / electrical properties
Charakteristische Werte / characteristic values
Diode Gleichrichter / diode rectifier
Durchlaßspannung
forward voltage
Schleusenspannung
threshold voltage
Ersatzwiderstand
slope resistance
Sperrstrom
reverse current
Tvj = 150°C,
Tvj = 150°C
Tvj = 150°C
Tvj = 150°C,
I F = 10 A
V R = 800 V
Modul Leitungswiderstand, Anschlüsse-Chip
lead resistance, terminals-chip
TC = 25°C
Transistor Wechselrichter / transistor inverter
Kollektor-Emitter Sättigungsspannung
collector-emitter saturation voltage
VGE = 15V, Tvj = 25°C, IC = 10 A
VGE = 15V, Tvj = 125°C, IC = 10 A
Gate-Schwellenspannung
gate threshold voltage
VCE = VGE, Tvj = 25°C, IC = 0,35mA
Eingangskapazität
input capacitance
Kollektor-Emitter Reststrom
collector-emitter cut-off current
f = 1MHz, Tvj = 25°C
VCE = 25 V, VGE = 0 V
VGE = 0V, Tvj =25°C, VCE = 600V
Gate-Emitter Reststrom
gate-emitter leakage current
Einschaltverzögerungszeit (ind. Last)
turn on delay time (inductive load)
Anstiegszeit (induktive Last)
rise time (inductive load)
Abschaltverzögerungszeit (ind. Last)
turn off delay time (inductive load)
Fallzeit (induktive Last)
fall time (inductive load)
Einschaltverlustenergie pro Puls
turn-on energy loss per pulse
Abschaltverlustenergie pro Puls
turn-off energy loss per pulse
Kurzschlußverhalten
SC Data
VCE = 0V, VGE =20V, Tvj =25°C
IC = INenn,
VCC =
VGE = ±15V, Tvj = 25°C, RG =
VGE = ±15V, Tvj = 125°C, RG =
IC = INenn,
VCC =
VGE = ±15V, Tvj = 25°C, RG =
VGE = ±15V, Tvj = 125°C, RG =
IC = INenn,
VCC =
VGE = ±15V, Tvj = 25°C, RG =
VGE = ±15V, Tvj = 125°C, RG =
IC = INenn,
VCC =
VGE = ±15V, Tvj = 25°C, RG =
VGE = ±15V, Tvj = 125°C, RG =
IC = INenn,
VCC =
VGE = ±15V, Tvj = 125°C, RG =
LS =
IC = INenn,
VCC =
VGE = ±15V, Tvj = 125°C, RG =
LS =
tP ≤ 10µs, VGE ≤ 15V, RG =
Tvj≤125°C,
VCC =
dI/dt =
300 V
82 Ohm
82 Ohm
300 V
82 Ohm
82 Ohm
300 V
82 Ohm
82 Ohm
300 V
82 Ohm
82 Ohm
300 V
82 Ohm
80 nH
300 V
82 Ohm
80 nH
82 Ohm
360 V
400 A/µs
min. typ. max.
VF
-
0,9
-
V
V(TO)
-
0,67
-
V
rT
-
21
-
mΩ
IR
-
5
-
mA
RAA'+CC'
-
11
-
mΩ
min. typ. max.
VCE sat
-
1,95 2,55
V
-
2,2
-
V
VGE(TO) 4,5
5,5
6,5
V
Cies
-
0,8
-
nF
ICES
-
-
5,0 mA
IGES
-
-
400 nA
td,on
-
32
-
ns
-
30
-
ns
tr
-
26
-
ns
-
28
-
ns
td,off
-
234
-
ns
-
230
-
ns
tf
-
10
-
ns
-
30
-
ns
Eon
-
0,36
-
mJ
Eoff
-
0,44
-
mJ
ISC
-
40
-
A
2(12)
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