FJX1182 查看數據表（PDF） - Fairchild Semiconductor
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FJX1182 Datasheet PDF : 4 Pages
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FJX1182
Low Frequency Power Amplifier
3
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
Parameter
VCBO
VCEO
VEBO
IC
PC
TJ
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
2
1 SOT-323
1. Base 2. Emitter 3. Collector
Ratings
-35
-30
-5
-500
150
150
-55 ~ 150
Units
V
V
V
mA
mW
°C
°C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
Parameter
Test Condition
ICBO
IEBO
hFE1
hFE2
VCE (sat)
VBE (on)
fT
Cob
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
VCB= -35, IE=0
VEB= -5V, IC=0
VCE= -1V, IC= -100mA
V CE= -6V, IC= -400mA
IC= -100mA, IB= -10mA
IC= -100mA, VCE= -1V
IC= -20mA, VCE= -6V
VCB= -6V, IE= 0
f=1MHz
Min.
70
25
Typ.
-0.1
-0.8
200
13
Max.
-0.1
-0.1
240
Units
µA
µA
-0.25
-1.0
V
V
MHz
pF
hFE Classification
Classification
hFE1
O
70 ~ 140
Y
120 ~ 240
Marking
SDX
Grade
©2002 Fairchild Semiconductor Corporation
Rev. A2, August 2002
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