HUR60120(2008) 查看數據表（PDF） - Sirectifier Electronics

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HUR60120
(Rev.:2008)

Soft Recovery Behaviour High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diodes

Sirectifier Electronics 

HUR60100, HUR60120

Soft Recovery Behaviour High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diodes

100

A

80

IF

60

40

TVJ=150°C

TVJ=100°C

TVJ= 25°C

10

C

Qr 8

6

4

TVJ= 100°C

VR = 600V

IF= 120A

IF= 60A

IF= 30A

100

A

80

IRM

TVJ= 100°C

VR = 600V

60 IF= 120A

IF= 60A

40 IF= 30A

20

2

20

0

0

1

2 V3

VF

Fig. 1 Forward current IF versus VF

2.0

1.5

Kf

1.0

IRM

0.5

Qr

0

100

A/us 1000

-diF/dt

Fig. 2 Reverse recovery charge Qr

versus -diF/dt

280

ns

trr

240

TVJ= 100°C

VR = 600V

IF= 120A

IF= 60A

IF= 30A

200

0

0 200 400 600 A8/0u0s 1000

-diF/dt

Fig. 3 Peak reverse current IRM

versus -diF/dt

120

V

VFR

tfr

80

TVJ= 100°C

IF = 60A

VFR

1.2

ıus

tfr

0.8

40

0.4

0.0

0

40

80 120 °C 160

TVJ

Fig. 4 Dynamic parameters Qr, IRM

versus TVJ

1

K/W

ZthJC

0.1

160

0 200 400 600 A8/0u0s 1000

-diF/dt

Fig. 5 Recovery time trr versus -diF/dt

0

0.0

0 200 400 600 A80/u0s 1000

diF/dt

Fig. 6 Peak forward voltage VFR and tfr

versus diF/dt

Constants for ZthJC calculation:

i

Rthi (K/W)

ti (s)

1

0.324

2

0.125

3

0.201

0.0052

0.0003

0.038

0.01

0.0001

0.001

0.01

0.1

Fig. 7 Transient thermal resistance junction to case

1

s

10

t

P3

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