IRG4PC50KPBF 查看數據表（PDF） - International Rectifier

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IRG4PC50KPBF

INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated UltraFast IGBT

International Rectifier 

IRG4PC50KPbF

5000

4000

3000

VGE = 0V, f = 1MHz

Cies = Cge + Cgc , Cce SHORTED

Cres = Cgc

Coes = Cce + Cgc

Cies

2000

1000

0

1

Coes

Cres

10

100

VCE , Collector-to-Emitter Voltage (V)

Fig. 7 - Typical Capacitance vs.

Collector-to-Emitter Voltage

4.0

VCC = 480V

V GE

TJ

=

=

15V

25 °

C

IC = 30A

3.0

2.0

1.0

20

VCC = 400V

I C = 30A

16

12

8

4

0

0

40

80

120

160

200

QG , Total Gate Charge (nC)

Fig. 8 - Typical Gate Charge vs.

Gate-to-Emitter Voltage

100 RG = 5O.0hΩm

VGE = 15V

VCC = 480V

10

1

IC = 60 A

IC = 30 A

IC = 15 A

0.0

0

10

20

30

40

50

RG , Gate Resistance ((OΩΩh)m)

0.1

-60 -40 -20 0 20 40 60 80 100 120 140 160

TJ , Junction Temperature ( °C )

Fig. 9 - Typical Switching Losses vs. Gate

Resistance

5

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Fig. 10 - Typical Switching Losses vs.

Junction Temperature

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June 2, 2015

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