IS42RM16800E 查看數據表（PDF） - Integrated Silicon Solution

零件编号

产品描述 (功能)

比赛名单

IS42RM16800E

16Mx8, 8Mx16, 4Mx32 128Mb Mobile Synchronous DRAM

Integrated Silicon Solution 

IS42SM81600E / IS42SM16800E / IS42SM32400E

IS42RM81600E / IS42RM16800E / IS42RM32400E

Test modes and reserved states should not be used because unknown operation or incompatibility with future

versions may result.

Write Burst Mode

When M9 = 0, the burst length programmed via M0-M2 applies to both READ and WRITE bursts; when M9 = 1, the

programmed burst length applies to READ bursts, but write accesses are single-location (nonburst) accesses.

CAS Latency

T0

T1

T2

T3

CLK

COMMAND

DQ

READ

NOP

NOP

tAC

DOUT

tLZ

tOH

CAS Latency - 2

T0

CLK

COMMAND READ

DQ

T1

T2

T3

T4

NOP

NOP

tAC

tLZ

CAS Latency - 3

NOP

DOUT

tOH

DON'T CARE

UNDEFINED

Integrated Silicon Solution, Inc. - www.issi.com

11

Rev.  B

04/15/2011

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