MMBD101 查看數據表（PDF） - Daesan Electronics Corp.
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MMBD101 Datasheet PDF : 2 Pages
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MMBD101
Surface Mount Schottky
Barrier Diode
Features
Low Turn-on Voltage
ForUHFmixerapplication
Also suitablefor use in detector and ultra-fast
switching circuitsLow NoiseFigure- 6.0dBTyp@1.0GHz
Very Low Capacitance-LessThan1.0pF@0V
HighForwardConductance-0.5V(Typ) @ IF= 10mA
A
L
3
To p View
1
2
BS
Mechanical Data
Case: SOT-23, Molded Plastic
Terminals: Solderable per MIL-STD-202,
Method 208
Polarity: See Diagrams Below
Weight: 0.008 grams (approx.)
Mounting Position: Any
V
G
C
D
H
K
J
3
1
2
3
CATHODE
1
ANODE
SOT-23
Dim Min Max
A 2.800 3.040
B 1.200 1.400
C 0.890 1.110
D 0.370 0.500
G 1.780 2.040
H 0.013 0.100
J 0.085 0.177
K 0.450 0.600
L 0.890 1.020
S 2.100 2.500
V 0.450 0.600
All Dimension in mm
MAXIMUM RATINGS
Rating
Reverse Voltage
Forward Power Dissipation
@ TA = 25oC
Derate above 25oC
Junction Temperature
Storage Temperature Range
DEVICE MARKING
MMBD101 = 4M
Symbol
VR
PF
TJ
Tstg
MMBD101
Value
7.0
225
1.8
+150
-55 to +150
Unit
Volts
mW
mW/oC
oC
oC
ELECTRICAL CHARACTERISTICS (TA = 25oCunless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Reverse Breakdown Voltage
(IR = 10 Ad c)
V(BR)R
7.0
10
Volts
Diode Capacitance
(VR = 0, f = 1.0 MHz )
CT
0.88
1.0
pF
Forward Voltage
(IF = 10 mAdc)
VF
0.5
0.6
Volts
Reverse Leakage
(VR = 3.0 Vdc)
IR
0.02
0.25
Adc
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