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MMDF2P02E(2011) 查看數據表(PDF) - ON Semiconductor

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产品描述 (功能)
比赛名单
MMDF2P02E
(Rev.:2011)
ON-Semiconductor
ON Semiconductor ON-Semiconductor
MMDF2P02E Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
100
VDD = 10 V
ID = 2 A
VGS = 10 V
TJ = 25°C
MMDF2P02E
2
TJ = 25°C
VGS = 0 V
1.6
1.2
td(off)
0.8
tr
tf
0.4
td(on)
10
0
1
10
100
0.6
RG, GATE RESISTANCE (OHMS)
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
0.8
1
1.2
1.4
1.6
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
Figure 10. Diode Forward Voltage
versus Current
di/dt = 300 A/ms
Standard Cell Density
trr
High Cell Density
trr
tb
ta
t, TIME
Figure 11. Reverse Recovery Time (trr)
SAFE OPERATING AREA
The Forward Biased Safe Operating Area curves define
the maximum simultaneous draintosource voltage and
drain current that a transistor can handle safely when it is
forward biased. Curves are based upon maximum peak
junction temperature and a case temperature (TC) of 25°C.
Peak repetitive pulsed power limits are determined by using
the thermal response data in conjunction with the procedures
discussed in AN569, “Transient Thermal Resistance
General Data and Its Use.”
Switching between the offstate and the onstate may
traverse any load line provided neither rated peak current
(IDM) nor rated voltage (VDSS) is exceeded, and that the
transition time (tr, tf) does not exceed 10 ms. In addition the
total power averaged over a complete switching cycle must
not exceed (TJ(MAX) TC)/(RqJC).
This MOSFET can be safely used in switching circuits
with unclamped inductive loads. For reliable operation, the
stored energy from circuit inductance dissipated in the
transistor while in avalanche must be less than the rated limit
and must be adjusted for operating conditions differing from
those specified. Although industry practice is to rate in terms
of energy, avalanche energy capability is not a constant. The
energy rating decreases nonlinearly with an increase of
peak current in avalanche and peak junction temperature.
Although many MOSFETs can withstand the stress of
draintosource avalanche at currents up to rated pulsed
current (IDM), the energy rating is specified at rated
continuous current (ID), in accordance with industry
custom. The energy rating must be derated for temperature
as shown in the accompanying graph (Figure 13). Maximum
energy at currents below rated continuous ID can safely be
assumed to equal the values indicated.
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