R6020ANJ 查看數據表（PDF） - ROHM Semiconductor
零件编号
产品描述 (功能)
比赛名单
R6020ANJ Datasheet PDF : 6 Pages
| |||
R6020ANJ
zElectrical characteristics curves
100
10
Operation in this
area is limited
by RDS(ON)
1
0.1
Tc = 25°C
Single Pulse
0.01
0.1
1
Pw=100u
Pw=1m
PW=10m
DC operation
10
100 1000
DRAIN-SOURCE VOLTAGE : VDS( V )
Fig.1 Maximum Safe Operating Aera
100
VDS= 10V
Pulsed
10
Ta= 125°C
1
Ta= 75°C
Ta= 25°C
0.1
Ta= -25°C
0.01
0.001
0.0 1.5 3.0 4.5 6.0
GATE-SOURCE VOLTAGE : VGS(V)
Fig.2 Typical Transfer Characteristics
Data Sheet
6
VDS= 10V
5 ID= 1mA
4
3
2
1
0
-50
0
50
100 150
CHANNEL TEMPERATURE: Tch (°C)
Fig.3 Gate Threshold Voltage
vs. Channel Temperature
10
VGS= 10V
Pulsed
1
0.1
Ta= 125°C
Ta= 75°C
0.01
Ta= 25°C
Ta= -25°C
0.001
0.01 0.1
1
10
100
DRAIN CURRENT : ID(A)
Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current
0.8
Ta=25°C
Pulsed
0.6
0.4
ID= 10.0A
0.2
ID= 20.0A
0
0
5
10
15
GATE-SOURCE VOLTAGE : VGS (V)
Fig.5 Static Drain-Source On-State
Resistance vs. Gate Source
0.5
VGS= 10V
Pulsed
0.4
0.3
ID= 20.0A
0.2
ID= 10.0A
0.1
0
-50
0
50
100 150
CHANNEL TEMPERATURE: Tch(°C)
Fig.6 Static Drain-Source On-State
Resistance vs. Channel Temperature
100
VDS= 10V
Pulsed
10
1
Ta= -25°C
Ta= 25°C
0.1
Ta= 75°C
Ta= 125°C
0.01
0.01
0.1
1
10
100
DRAIN CURRENT : ID(A)
Fig.7 Forward Transfer Admittance
vs. Drain Current
100
VGS= 0V
Pulsed
10
1
Ta= 125°C
Ta= 75°C
0.1
Ta= 25°C
Ta= -25°C
0.01
0
0.5
1
1.5
SOURCE-DRAIN VOLTAGE : VSD(V)
Fig.8 Reverse Drain Current vs.
Sourse-Drain Voltage
100000
10000
Ciss
1000
100
Crss
Coss
10 Ta= 25°C
f= 1MHz
VGS= 0V
1
0.01 0.1 1
10 100 1000 1000
0
DRAIN-SOURCE VOLTAGE : VDS(V)
Fig.9 Typical Capacitance vs.
Drain-Source Voltage
www.rohm.com
3/5
○c 2009 ROHM Co., Ltd. All rights reserved.
2009.06 - Rev.A
Share Link: 