R6012FNX 查看數據表（PDF） - ROHM Semiconductor
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R6012FNX Datasheet PDF : 14 Pages
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R6012FNX
lElectrical characteristic curves
Data Sheet
Fig.18 Typical Capacitance
vs. Drain - Source Voltage
Fig.19 Coss Stored Energy
100000
10
10000
Ta=25ºC
f=1MHz
VGS=0V
1000
Ta = 25ºC
8
Ciss
6
for
100
Coss
d 10
Crss
de 1
0.01 0.1
1
10 100 1000
n s Drain - Source Voltage : VDS [V]
4
2
0
0
200
400
600
Drain - Source Voltage : VDS [V]
me sign Fig.20 Switching Characteristics
m e 10000
co D 1000
VDD≒300V
VGS=10V
tf
RG=10W
Ta=25ºC
Pulsed
Re ew 100
td(on)
td(off)
t N 10
tr
No1
Fig.21 Dynamic Input Characteristics
12
Ta=25ºC
10
VDD=300V
ID=12A
Pulsed
8
6
4
2
0
0.01
0.1
1
10
100
0 5 10 15 20 25 30 35 40 45 50
Drain Current : ID [A]
Total Gate Charge : Qg [nC]
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10/13
2013.04 - Rev.B
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