RJK5014DPP 查看數據表（PDF） - Renesas Electronics

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RJK5014DPP

Silicon N-Channel MOS FET High Speed Power Switching

Renesas Electronics 

RJK5014DPP

Silicon N Channel MOS FET

High Speed Power Switching

Features

• Low on-resistance

RDS(on) = 0.325 Ω typ. (at ID = 9.5 A, VGS = 10 V, Ta = 25 °C)

• Low leakage current

• High speed switching

Outline

RENESAS Package code: PRSS0003AB-A

(Package name: TO-220FN)

G

1

23

Absolute Maximum Ratings

Item

Symbol

Drain to source voltage

Gate to source voltage

Drain current

Drain peak current

Body-drain diode reverse drain current

Body-drain diode reverse drain peak current

Avalanche current

Avalanche energy

Channel dissipation

VDSS

VGSS

IDNote4

ID

Note1

(pulse)

IDR

IDR

Note1

(pulse)

IAPNote3

EARNote3

Pch Note2

Channel to case thermal impedance

θch-c

Channel temperature

Tch

Storage temperature

Tstg

Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1%

2. Value at Tc = 25°C

3. STch = 25°C, Tch ≤ 150°C

4. Limited by maximum safe operation area

REJ03G1530-0200

Rev.2.00

Dec 02, 2009

D

1. Gate

2. Drain

3. Source

S

Ratings

500

±30

19

38

19

38

4

0.88

35

3.57

150

–55 to +150

(Ta = 25°C)

Unit

V

V

A

A

A

A

A

mJ

W

°C/W

°C

°C

REJ03G1530-0200 Rev.2.00 Dec 02, 2009

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