RT3K33M 查看數據表（PDF） - Isahaya Electronics
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RT3K33M Datasheet PDF : 4 Pages
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TYPICAL CHARACTERISTICS
Ta=25℃
100
1.6V 1.5V
80
ID -VDS
1.4V
60
40
20
0
0
1.3V
1.2V
1.1V
VGS=1.0V
2
4
6
8
10
Drain-Source voltage VDS (V)
100
Ta=25℃
VGS=0V
IDR -VDS
10
Ta=25℃
1
1.0V
0.8
ID -VDS(Low voltage region)
0.6
0.95V
0.4
0.2
0
0
0.9V
0.85V
VGS=0.8V
0.1
0.2
0.3
0.4
0.5
Drain-Source voltage VDS (V)
1000
Ta=25℃
VDS=10V
100
ID -VGS
10
1
-0
-0.5
-1
-1.5
Drain-Source voltage VDS (V)
1000
Ta=25℃
VDS=10V
100
|Yfs| - ID
10
1
-2
0
1
2
3
4
5
Gate-Source voltage VGS (V)
1000
100
Ta=25℃
VGS=4V
VDS(ON) -ID
10
1
1
1
10000
toff
1000
tｆ
100
ton
10
tr
1
0.1
10
100
Drain current ID (mA)
t - ID
1000
Ta=25℃
0.1
1
100
10
100
Drain current ID (mA)
C - VDS
Ciss
1
10
Drain current ID (mA)
10
Coss
Ta=25℃
VGS=0V
1
0.1
1
10
100
100
Drain-Source voltage VDS (V)
ISAHAYA ELECTRONICS CORPORATION
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