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Preliminary data
SPD02N60
SPU02N60
Avalanche Energy EAS = f (Tj)
parameter: ID = 2 A,VDD = 50 V
RGS = 25 Ω
140
mJ
120
110
100
90
80
70
60
50
40
30
20
10
0
20 40 60 80 100 120
Drain-source breakdown voltage
V(BR)DSS = f (Tj)
SPD02N60
720
V
°C 160
Tj
680
660
640
620
600
580
560
540
-60
-20
20
60 100 °C
180
Tj
Semiconductor Group
8
10 / 1998