F12NK60Z(2005) 查看數據表（PDF） - STMicroelectronics
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产品描述 (功能)
比赛名单
F12NK60Z
(Rev.:2005)
(Rev.:2005)
STMicroelectronics
F12NK60Z Datasheet PDF : 12 Pages
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STP12NK60Z - STF12NK60Z
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
Table 7: On/Off
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
V(BR)DSS Drain-source
ID = 1 mA, VGS = 0
600
V
Breakdown Voltage
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating, TC = 125 °C
1
µA
50
µA
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20 V
±10
µA
VGS(th) Gate Threshold Voltage
VDS = VGS, ID = 100 µA
3
3.75
4.5
V
RDS(on)
Static Drain-source On
Resistance
VGS = 10 V, ID = 5 A
0.53 0.64
Ω
Table 8: Dynamic
Symbol
Parameter
gfs (1) Forward Transconductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Coss eq. (3) Equivalent Output
Capacitance
td(on)
tr
td(off)
tf
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
Test Conditions
VDS =10 V, ID = 5 A
VDS = 25 V, f = 1 MHz, VGS = 0
Min.
VGS = 0V, VDS = 0V to 480 V
VDD = 300 V, ID = 5 A
RG = 4.7Ω VGS = 10 V
(see Figure 19)
VDD = 480 V, ID = 10 A,
VGS = 10 V
(see Figure 22)
Typ.
9
1740
195
49
101
22.5
18.5
55
31.5
59
10
32
Max.
Unit
S
pF
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Table 9: Source Drain Diode
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
ISD
ISDM (2)
Source-drain Current
Source-drain Current (pulsed)
10
A
40
A
VSD (1) Forward On Voltage
ISD = 10 A, VGS = 0
1.6
V
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 10 A, di/dt = 100 A/µs
VDD = 50 V, Tj = 25°C
(see test circuit, Figure 5)
358
ns
3
µC
17
A
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 10 A, di/dt = 100 A/µs
VDD = 50 V, Tj = 150°C
(see test circuit, Figure 5)
460
ns
4.2
µC
18.2
A
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80%
VDSS.
3/12
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