P75NS04Z 查看數據表（PDF） - STMicroelectronics

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P75NS04Z

N-channel Clamped - 7mΩ - 80A - TO-220 Fully protected MESH Overlay™ III Power MOSFET

STMicroelectronics 

STP75NS04Z

1

Electrical ratings

Electrical ratings

Table 1. Absolute maximum ratings

Symbol

Parameter

VDS

Drain-source voltage (VGS = 0)

VDG

Drain-gate voltage (VGS = 0)

VGS

Gate-source voltage

ID(1)

Drain current (continuous) at TC = 25°C

ID

Drain current (continuous) at TC = 100°C

IDG

Drain gate current (continuos)

IGS

Gate source current (continuos)

IDM(2) Drain current (pulsed)

PTOT Total dissipation at TC = 25°C

Derating factor

VESD Gate-source ESD (HBM-C=100pF, R=1.5KΩ)

Tj

Operating junction temperature

Tstg

Storage temperature

1. Current limited by wire bonding

2. Pulse with limited by safe operating area

Table 2. Thermal data

Symbol

Parameter

Rthj-case

Rthj-amb

Tl

Thermal resistance junction-case Max

Thermal resistance junction-ambient Max

Maximum lead temperature for soldering purpose

Table 3. Avalanche data

Symbol

Parameter

EAS

Single pulse avalanche energy (starting Tj=25°C,

ID=IAR, VDD=25V)

Value

Clamped

Clamped

Clamped

80

63

±50

±50

320

110

0.73

±8

-55 to 175

Value

1.36

62.5

300

Value

470

Unit

V

V

V

A

A

mA

mA

A

W

W/°C

kV

°C

Unit

°C/W

°C/W

°C

Unit

mJ

3/12

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