STF7NM80 查看數據表（PDF） - STMicroelectronics

零件编号

产品描述 (功能)

比赛名单

STF7NM80

N-channel 800 V, 0.95 Ω typ., 6.5 A MDmesh™ II Power MOSFETs in DPAK, IPAK, TO-220FP and TO-220 packages

STMicroelectronics 

STD7NM80, STD7NM80-1, STF7NM80, STP7NM80

Electrical characteristics

Symbol

Parameter

Test condition

Min.

Typ.

Max.

Unit

VSD (2)

Forward on voltage

ISD = 6.5 A, VGS = 0 V

-

1.3

V

trr

Reverse recovery time

ISD = 6.5 A, di/dt = 100 V

460

ns

Qrr

Reverse recovery charge

VDD = 50 V (see Figure

18. Test circuit for inductive

-

4

μC

IRRM

Reverse recovery current

load switching and diode

recovery times)

17

A

trr

Reverse recovery time

ISD = 6.5 A, di/dt = 100 A/µs

680

ns

Qrr

Reverse recovery charge

VDD = 50 V (see Figure

18. Test circuit for inductive

-

6

μC

IRRM

Reverse recovery current

load switching and diode

recovery times)

17

A

1. Pulse width limited by safe operating area.

2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%.

DS4854 - Rev 4

page 4/24

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