T15V256A 查看數據表（PDF） - Taiwan Memory Technology

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T15V256A

32K X 8 LOW POWER CMOS STATIC RAM

Taiwan Memory Technology 

tm TE

CH

DATA RETENTION CHARACTERISTICS

Item

Symbol

Test Condition

Vcc for data retention

VDR

Data retention current

IDR

Data retention set-up time tSDR

Recovery time

tRDR

CS ≥ Vcc-0.2V

Vcc=3.0, CS ≥ Vcc-0.2V

See data retention waveform

T15V256A

Min Typ max unit

1.5 - 3.6 V

-

5 uA

0

-

-

ms

5

-

-

DATA RETENTION WAVE FORM

Data Retention Mode

VCC

V cc_typ

tS D R

V > 1.5V

DR

CS >VCC-0.2V

CS

V

IH

Vcc_TYP

t

RDR

V

IH

Taiwan Memory Technology, Inc. reserves the right P. 6

to change products or specifications without notice.

Publication Date: SEP. 2001

Revision:A

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