U20DCT-E3/4W 查看數據表（PDF） - Vishay Semiconductors
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U20DCT-E3/4W Datasheet PDF : 5 Pages
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100
TJ = 125 °C
10
TJ = 100 °C
1
TJ = 75 °C
0.1
TJ = 50 °C
0.01
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
1000
100
10
TJ = 125 °C
TJ = 100 °C
TJ = 75 °C
TJ = 50 °C
1
10 20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics Per Diode
U20xCT-E3, UB20xCT-E3
Vishay General Semiconductor
100
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
10
0.1
1
10
100
Reverse Voltage (V)
Fig. 5 - Typical Junction Capacitance Per Diode
100
1
0.1
0.001
0.01
0.1
1
10
100
t - Pulse Duration (s)
Fig. 6 - Typical Junction Capacitance Per Diode
Revision: 30-Oct-13
3
Document Number: 89017
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