UPC4250G2-T1 查看數據表（PDF） - NEC => Renesas Technology
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UPC4250G2-T1 Datasheet PDF : 12 Pages
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µPC4250
ELECTRICAL CHARACTERISTICS (TA = 25°C, V± = ±15 V)
Parameter
Symbol
Conditions
Input Offset Voltage
VIO
Input Offset Current Note 7
IIO
Input Bias Current Note 7
IB
Large Signal Voltage Gain
Av
Supply Current
ICC
Power Dissipation
Pd
Common Mode Rejection Ratio
Supply Voltage Rejection Ratio
Output Voltage Swing
CMR
SVR
Vom
Output Voltage Swing
Vom
Common Mode Input Voltage Range VICM
RS ≤ 100 kΩ
V± = ±1.5 V, RS ≤ 100 kΩ
V± = ±1.5 V
VO = ±10 V, RL = 100 kΩ
VO = ±10 V, RL = 10 kΩ
IO = 0 A
V± = ±1.5 V, IO = 0 A
IO = 0 A
V± = ±1.5 V, IO = 0 A
RS ≤ 10 kΩ
RS ≤ 10 kΩ
RL = 100 kΩ
V± = ±1.5 V, RL = 100 kΩ
RL = 10 kΩ
V± = ±1.5 V, RL = 10 kΩ
V± = ±1.5 V
ISET = 1 µA
ISET = 10 µA
Unit
MIN. MAX. MIN. MAX.
±5
±6
mV
±5
±6
±6
±20
nA
10
75
nA
10
75
60000
60000
11
100
µA
8
90
330
3000
µW
24
270
70
70
dB
74
74
dB
±12
V
±0.6
±12
V
±0.6
±13.5
±13.5
V
±0.6
±0.6
Notes 7. Input bias currents flow out from IC. Because each currents are base current of PNP-transistor on input stage.
TYPICAL APPLICATION
330 k
VIN
3.3 M
+1.0 V
−
VO
+
300 k
RSET
12 M
−1.0 V
x10 Amplifier (500 nW)
4
Data Sheet G15640EJ3V0DS
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