UT62L25616 查看數據表（PDF） - Utron Technology Inc
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UT62L25616 Datasheet PDF : 12 Pages
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Rev. 1.1
UTRON
UT62L25616
256K X 16 BIT LOW POWER CMOS SRAM
CAPACITANCE (TA=25℃, f=1.0MHz)
PARAMETER
SYMBOL
MIN.
Input Capacitance
CIN
-
Input/Output Capacitance
CI/O
-
Note : These parameters are guaranteed by device characterization, but not production tested.
AC TEST CONDITIONS
MAX
6
8
UNIT
pF
pF
Input Pulse Levels
Input Rise and Fall Times
Input and Output Timing Reference Levels
Output Load
0V to 3.0V
5ns
1.5V
CL = 30pF, IOH/IOL = -1mA / 2.1mA
AC ELECTRICAL CHARACTERISTICS (VCC =2.7V~3.6V, TA =0℃ to 70℃ / -20℃ to 80℃(E))
(1) READ CYCLE
PARAMETER
SYMBOL
Read Cycle Time
Address Access Time
Chip Enable Access Time
Output Enable Access Time
Chip Enable to Output in Low Z
Output Enable to Output in Low Z
Chip Disable to Output in High Z
Output Disable to Output in High Z
Output Hold from Address Change
LB , UB Access Time
LB , UB to High-Z Output
LB , UB to Low-Z Output
tRC
tAA
tACE
tOE
tCLZ*
tOLZ*
tCHZ*
tOHZ*
tOH
tBA
tHZB
tLZB
UT62L25616-55
MIN. MAX.
55
-
-
55
-
55
-
30
10
-
5
-
-
20
-
20
5
-
-
55
-
25
0
-
UT62L25616-70
MIN. MAX.
70
-
-
70
-
70
-
35
10
-
5
-
-
25
-
25
5
-
-
70
-
30
0
-
UT62L25616-100 UNIT
MIN. MAX.
100
-
ns
-
100 ns
-
100 ns
-
50
ns
10
-
ns
5
-
ns
-
30
ns
-
30
ns
5
-
ns
-
100 ns
-
40
ns
0
-
ns
(2) WRITE CYCLE
PARAMETER
SYMBOL UT62L25616-55 UT62L25616-70
MIN. MAX. MIN. MAX.
Write Cycle Time
tWC
55
-
70
-
Address Valid to End of Write
tAW
50
-
60
-
Chip Enable to End of Write
tCW
50
-
60
-
Address Set-up Time
tAS
0
-
0
-
Write Pulse Width
tWP
45
-
55
-
Write Recovery Time
tWR
0
-
0
-
Data to Write Time Overlap
tDW
25
-
30
-
Data Hold from End of Write Time tDH
0
-
0
-
Output Active from End of Write
tOW*
5
-
5
-
Write to Output in High Z
tWHZ*
-
30
-
30
LB , UB Valid to End of Write
tBW
45
-
60
-
*These parameters are guaranteed by device characterization, but not production tested.
UT62L25616-100 UNIT
MIN. MAX.
100
-
ns
80
-
ns
80
-
ns
0
-
ns
70
-
ns
0
-
ns
40
-
ns
0
-
ns
5
-
ns
-
40
ns
80
-
ns
UTRON TECHNOLOGY INC.
1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C.
TEL: 886-3-5777882 FAX: 886-3-5777919
4
P80055
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