X1049A
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING (TA=25℃)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
80
V
Collector-Emitter Voltage
VCEO
25
V
Emitter-Base Voltage
VEBO
5
V
Collector Current
DC
Pulse
IC
4
A
20
A
Base Current
IB
500
mA
Power Dissipation
Junction Temperature
Operating Temperature
Storage Temperature
PD
TJ
TOPR
TSTG
1
W
125
℃
-20 ~ +85
℃
-40 ~ +150
℃
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
Collector-Base Breakdown Voltage
VCBO IC=100μA
80 120
V
Collector-Emitter Breakdown Voltage
VCEO IC=10mA
25
35
V
Collector-Emitter Breakdown Voltage
VCES IC=100μA
80 120
V
Collector-Emitter Breakdown Voltage
VCEV IC=100μA, VEB=1V
80 120
V
Emitter-Base Breakdown Voltage
VEBO IE=100μA
5 8.75
V
Collector Cut-Off Current
ICBO VCB=50V
0.3
10
nA
Emitter Cut-Off Current
IEBO VEB=4V
0.3
10
nA
Collector Emitter Cut-Off Current
ICES VCES=50V
0.3
10
nA
IC=0.5A, IB=10mA
30
70
Collector-Emitter Saturation Voltage
(Note)
VCE(SAT)
IC=1A, IB=10mA
IC=2A, IB=10mA
60 130
125 280
mV
IC=4A, IB=50mA
155 400
Base-Emitter Saturation Voltage (Note) VBE(SAT) IC=4A, IB=50mA
890 980 mV
Base-Emitter Turn-On Voltage (Note) VBE(ON) IC=4A, VCE=2V
820 920 mV
IC=10mA, VCE=2V
250 430
IC=0.5A, VCE=2V
300 450
DC Current Gain (Note)
hFE IC=1A, VCE=2V
300 450 1200
IC=4A, VCE=2V
200 350
IC=20A, VCE=2V
7
Transition Frequency
fT IC=50mA, VCE=10V, f=50MHz
180
MHz
Output Capacitance
COBO VCB=10V, f=1MHz
45
60
pF
Turn-On Time
tON IC=4A, IB=40mA, VCC=10V
125
ns
Turn-Off Time
tOFF IC=4A, IB=±40mA, VCC=10V
380
ns
Note: Measured under pulsed conditions. Pulse width=300μs. Duty cycle ≤2%
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R201-061.C