2N2880-220M 查看數據表（PDF） - Semelab - > TT Electronics plc

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2N2880-220M

NPN POWER SILICON TRANSISTOR FOR HI–REL APPLICATIONS

Semelab - > TT Electronics plc  

2N2880-220M

ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)

ICEO

ICBO

IEBO

V(BR)CEO

V(BR)CEO

V(BR)EBO

VBE(sat)

VCE(sat)

hFE

hfe

Cobo

tr

ts

tf

Parameter

Test Conditions

Collector – Emitter Cut-off Current

VCE = 50V

IB = 0

Collector – Base Cut-off Current

VCE = 80V

IE = 0

Emitter – Base Cut-off Current

VEB = 4V

IC = 0

Collector – Emitter Breakdown Voltage IC = 100mA

Collector – Base Breakdown Voltage IC = 10µA

Base – Emitter Breakdown Voltage

IE = 10µA

Base – Emitter Saturation Voltage

IC = 1.0A

IB = 0.1A

Collector – Emitter Saturation Voltage IC = 1.0A

IC = 5.0A

IB = 0.1A

IB = 0.5A

DC Current Gain

IC = 1.0A

IC = 0.5A

VCE = 5V

VCE = 5V

High Frequency Forward Current Gain IC = 1.0A

f = 10MHz

VCE = 10V

Open Circuit Output Capacitance

Rise Time

Storage Time

Fall Time

f = 1MHz

IC = 1.0A

VCC = 20V

IB1= 100mA

VCB = 10V

Min.

80

100

8.0

40

15

3.0

Typ.

Max.

100

0.2

0.2

Unit

µA

V

1.2

0.25

2.0

120

—

—

150 pF

0.3

2.0 µs

0.35

*Pulsed : Pulse duration ≤ 300 µs , duty cycle ≤ 2.0%

Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed

to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.

Semelab encourages customers to verify that datasheets are current before placing orders.

Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.

E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk

Document Number 5550

Issue 2

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