JMnic
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ;IB=0
VCEsat Collector-emitter saturation voltage IC=-2.0A; IB=-0.2A
VBE
Base-emitter on voltage
IC=-0.5A ; VCE=-2V
ICBO
Collector cut-off current
VCB=-40V; IE=0
IEBO
Emitter cut-off current
VEB=-5V; IC=0
hFE-1
DC current gain
IC=-0.5A ; VCE=-2V
hFE-2
DC current gain
IC=-2.5A ; VCE=-2V
fT
Transition frequency
IC=-0.5A ; VCE=-2V
COB
Collector output capacitance
f=1MHz ; VCB=-10V;IE=0
hFE-1 Classifications
O
Y
80-160
120-240
Product Specification
2SA1217
MIN TYP. MAX UNIT
-40
V
-0.8
V
-1.0
V
-0.1 μA
-0.1 μA
80
240
25
100
MHz
35
pF
2