2SB1197KRLT1 查看數據表（PDF） - Willas Electronic Corp.
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2SB1197KRLT1 Datasheet PDF : 3 Pages
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WILLAS
2SB1197KxLFTMT11H2R0U-M+
Low Frequency Transistor
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
FM1200-M+
SOD-123+ PACKAGE
Pb Free Product
Features
Package outline
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
PNP Silicon • Low profile surface mounted application in order to
optimize board space.
SOD-123H
• Low power loss, high efficiency.
• HFigEhAcTuUrrRenEt capability, low forward voltage drop.
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
• HigƽhHsiguhrgceurcraenptacbailpitayc.ity in compact package.
• GuarICdr=iníg0f.8oAr .overvoltage protection.
• UltƽraEhpiitgahx-iaslppelaendasrwtyiptceh. ing.
• SilƽicNonPNepciotamxpialelmpelannt:a2rScDh1ip7,8m1Ketal silicon junction.
• Lead-free parts meet environmental standards of
MIƽL-WSTeDd-e1c9la5r0e0th/2a2t 8the material of product compliance with RoHS requirements.
• RoHSPpbr-oFdruectefopr apcackkainggecoisdeasvuaffiixla"Gb"le
0.071(1.8)
0.056(1.4)
SOT– 23
HalogReonHfrSeepprrodduucct tfofroprapckaicngkicnogdecsoudffeixs"Hu"ffix ”G”
MecHhaalongiecnafrlede aprtoaduct for packing code suffix “H”
• Epoxy : UL94-V0 rated flame retardant
0.040(1.0)
3 0.024(0.6)
COLLECTOR
D• ECVaIsCeE: MMoAldReKdIpNlaGstAicN, DSOODR-1D2E3RHING INFORMATION
,
• Terminals :Plated terminals, solderable per MIL-STD-750
Device Method 2026
Marking
Shipping
0.031(0.8) Typ.
1
BASE
0.031(0.8) Typ.
• Pol2aSrBity11:9I7nKdQicLaTte1d by cathode baAnHdQ
• Mo2uSnBtin11g9P7oKsRitLiTo1n : Any
AHR
• Weight : Approximated 0.011 gram
3000/Tape&Reel
3000/Tape&Reel
Dimensions in inches and (millim2eters)
EMITTER
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
RatingMs aAtX2I5M℃UMamRAbiTeInNtGteSm(Tpae=ra2t5uqrCe )unless otherwise specified.
Single phase half wPaavera,m60etHezr , resistive of indSuycmtibvoel load. Limits
Unit
For capacitCivoellelocatodr,-bdaesreatveocltuargrent by 20% VCBO
−40
V
Collector-emRiAtteTrINvoGltSage
Marking CodEemitter-base voltage
Maximum RCecoullrerecntotrPceuarkreRnet verse Voltage
Maximum RCMoSllVecotlotargpeower dissipation
Maximum DJCuBnclotcioknintgemVopletargaeture
Maximum AvSetorargaegeFoterwmapredraRteucretified Current
VCEO SYMBOL FM−31220-MH FM130-MHVFM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
VEBO
−512
13 V 14
15
16
18
10
115 120
IC VRRM −02.80
30 A 40
50
60
80
100
150
200 V
PC VRMS
0.124
21 W 28
35
42
56
70
105
140 V
Tj VDC
15200
30 °C 40
50
60
80
100
150
200 V
Tstg IO −55 to 150
°C
1.0
A
Peak FoErwLaErdCSTuRrgIeCCAuLrreCnHt 8A.3RmAsCsTinEglRe IhSaTlf IsCinSe-(wTaav=e25qCIF)SM
30
A
superimposed on rated load (JEDEC method)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Typical Thermal Resistance (Note 2)
RΘJA
40
℃
Typical JuncCtioonlleCcatopra-bciatasnecber(eNaoktdeo1w)n voltage
BVCBOCJ −40
−
−
V IC= −50µA
120
P
Operating TeCmoplleecratotur-reemRiattnegrebreakdown voltage BVCEOTJ −32
− -55 to−+125 V IC= −1mA
-55 to +150
Storage TemEpmeritateturr-ebaRsaenbgreeakdown voltage
BVETBOSTG −5
−
−
V IE= −50µA - 65 to +175
Collector cutoff current
ICBO
−
− −0.5 µA VCB= −20V
Emitter CcuHtAofRf AcuCrTreEnRtISTICS
IEBSOYMBOL−FM120-M−H FM1−300.-5MH FMµ14A0-MH VFMEB1=50−-4MVH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
Maximum Forward Voltage at 1.0A DC
VF
0.50
0.70
0.85
0.9
0.92 V
Collector-emitter saturation voltage VCE(sat) −
− −0.5
V IC/IB= −0.5A/ −50mA
Maximum Average Reverse Current at
Rated DC BlDocCkicnugrrVeonlttatgraensfer ratio
@T A=25℃
@T A=125℃
hFE
IR
120
−
390
0.5
−
VCE= −3V, IC= −11000mA
m
Transition frequency
fT
−
200
− MHz VCE= −5V, IE=50mA, f=100MHz
NOTES: Output capacitance
Cob
−
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
12
30
pF VCB= −10V, IE=0A, f=1MHz
2- Thermal Resistance From Junction to Ambient
hFE values are classified as follows :
Item(*)
Q
hFE
120~270
R
180~390
2012-06
2012-
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
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