2SB1440 查看數據表（PDF） - Willas Electronic Corp.

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2SB1440

SOT-89 Plastic-Encapsulate Transistors

Willas Electronic Corp. 

WILLAS

S1O.0TA -S8U9RFAPClEaMsOtiUcN-TESnCHcOaTpTKsYuBlAaRtReIERTrRaECnTsIFiIsERtSo-r2s0V- 200V

Typical CSOhDa-1r2a3c+tePrAisCKtiAcGsE

FM120-M+

2SB1440THRU

FM1200-M+

Pb Free Product

Static Characteristic

Fea -0.22 tures

•-

0B.2a0 tch

process

design,

exce-1l.l0emnAt

power

dissipCOaMtiMoOnNoffers

EMITTER

better reverse leakage curren-0t.9amnAd thermal rTe=s2i5s℃tance.

a

• Low profile surface mounted application in order to

optimize board space.

-0.8mA

•- 0L.1o5 w power loss, high efficiency. -0.7mA

• High current capability, low forward voltage drop.

• High surge capability.

-0.6mA

• Guardring for overvoltage protection. -0.5mA

- 0.10

• Ultra high-speed switching.

-0.4mA

• Silicon epitaxial planar chip, metal silicon junction.

• Lead-free parts meet environmental standa-0r.d3msAof

- 0M.05IL-STD-19500 /228

• RoHS product for packing code suffix "G"

-0.2mA

Halogen free product for packing code suffix "H" I =-0.1mA

B

Mechanical data

0.00

0

-1

-2

-3

-4

-5

-6

-7

• Epoxy : UL94-V0 rated flame retardant

COLLECTOR-EMITTER VOLTAGE V (V)

• Case : Molded plastic, SOD-123H

CE

,

• Terminals :Plated terminals, solderable per MIL-STD-750

Package outlinehFE —— IC

800

SOD-123H

T =100 oC

0.1a46(3.7)

300

0.130(3.3)

200

T =25 oC

a

100

V = -2V

CE

0.012(0.3) Typ.

0.071(1.8)

0.056(1.4)

50

- 1E-3

- 0.01

- 0.1

0.040(1.0-) 1 - 2

0.024(0.6)

COLLECTOR CURRENT I (A)

C

0.031(0.8) Typ.

0.031(0.8) Typ.

•-

P70o0 larity

:

Method 2V0C2E6sat ——

Indicated by cathode

IC

band

- 1100

VBEsat —— IC

Dimensions in inches and (millimeters)

• Mounting Position : Any

- 1000

• Weight : Approximated 0.011 gram

- 900

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25℃ ambient temperature unless otherwise specified.

- 800

Single p-h1a00se half wave, 60Hz, resistive of inductive load.

- 700

For capacitive load, derate current by 20%

T =25℃

a

Marking Code

RATINGS

T =100℃

a

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

Maximum DC Blocking Voltage

Maximum- A-1v01Ee-r4age Forw-a1rdE-3Rectified C- 0u.0rr1ent

SYMBOL FM120-MH FM130-MH- F6M00140-MH FM150-MH FM160-MH FM180-MH FM11T0a0=-1M00H℃FM1150-MH FM1200-MH UNI

T =25℃

12

13

14

15

16

a

VRRM

20

30 - 50040

50

60

18

10

115 120

80

100

150

200 Volts

VRMS

VDC

- 0.1 IO

14

20

β=20

- 1 -2

21 - 40028

30

40

- 300

- 1E-4

35

50

- 1E-3

42

56

60

80

1.0- 0.01

70

100

- 0.1

105

140

150

200

β=20

- 1 -2

Volts

Volts

Amp

Peak Forward Surge CurrentC8O.3LLmEsCTsOinRglCeUhRaRlfEsNinTe-wICav(eA) IFSM

superimposed on rated load (JEDEC method)

Typical Thermal Resistance (Note 2)

Typical Junction Capacitance C(Nobot/eC1i)b

500

Operating Temperature Range

Storage Temperature Range

——

RΘJA

VCB / VEBCJ

TJ f=1MHz

I =0 / I =0

TSTG E C

T =25 oC

a

600

-55 to +125

500

COLLECTOR CURRENT I (A)

30

C

40

P1c20 ——

- 65 to +175

Ta

-55 to +150

Amp

℃/W

PF

℃

℃

CHARACTERISTICS

SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT

Maximum Forward Voltage at 1.0A DC

VF

0.54000

0.70

0.85

0.9

0.92 Volts

Maximum A10v0erage Reverse Current at @T A=25℃

IR

0.5

mAm

Rated DC Blocking Voltage

@T A=125℃

Cib

10

300

NOTES:

1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.

200

2- Thermal Resistance From Junction to Ambient

Cob

100

10

- 0.1

-1

- 10

REVERSE VOLTAGE V (V)

2012-06

2012-0

0

0

25

50

75

100

125

150

AMBIENT TEMPERATURE T (℃)

a

WILLAS ELECTRONIC CORP.

WILLAS ELECTRONIC CORP.

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