2SC2411KRLT1 查看數據表（PDF） - Willas Electronic Corp.

零件编号

产品描述 (功能)

比赛名单

2SC2411KRLT1

Medium Power Transistor

Willas Electronic Corp. 

Medium Power Transistor

2SC2411KxLT1

NPN silicon

FEATURE

ƽEpitaxial planar type

ƽComplementary to 2SA1036K

ƽ We declare that the material of product compliance with RoHS requirements.

SOT– 23

DEVICE MARKING AND ORDERING INFORMATION

Device

Marking

Shipping

2SC2411KQLT1

CQ

3000/Tape&Reel

2SC2411KRLT1

CR

3000/Tape&Reel

1

BASE

3

COLLECTOR

2

EMITTER

MAXIMUM RATINGS (TA = 25°C)

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature

Symbol

VCBO

VCEO

VEBO

IC

PC

Tj

Tstg

Limits

40

32

5

0.5

0.2

150

-55~+150

*PC must not be exceeded.

ELECTRICAL CHARACTERISTICS(TA=25°C)

Parameter

Symbol Min.

Typ

Collector-base breakdown voltage

BVCBO

40

-

Collector-emitter breakdown voltage

BVCEO

32

-

Emitter-base breakdown voltgae

BVEBO

5

-

Collector cutoff current

ICBO

-

-

Emitter cutoff current

IEBO

-

-

DC current transfer ratio

hFE

2

-

Collcetor-emitter saturation voltage

VCE(sat)

-

-

Transition frequency

fT

-

250

Output capacitance

Cob

-

6.0

Unit

V

V

V

A*

W

°C

°C

Max.

-

-

-

1

1

390

0.4

-

-

Unit

V

V

V

µA

µA

-

V

MHz

pF

Conditions

IC=100µA

IC=1mA

IE=100µA

VCB=20V

VEB=4V

VCE=3V ,IC =100mA

IC/IB=500mA/50mA

VCE=5V,IE=-20mA,f=100MHz

VCB=10V,IE=0A,f=1MHz

hFE values are classified as follows:

Item

QR

hFE

120~270 180~390

2012-

WILLAS ELECTRONIC CORP.

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