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ACT8810QJ420-T(2010) 查看數據表(PDF) - Active-Semi, Inc

零件编号
产品描述 (功能)
比赛名单
ACT8810QJ420-T
(Rev.:2010)
ACTIVE-SEMI
Active-Semi, Inc ACTIVE-SEMI
ACT8810QJ420-T Datasheet PDF : 53 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
Active-Semi
ACT8810
Rev 8, 08-Oct-10
SYSTEM MANAGEMENT
ELECTRICAL CHARACTERISTICS
(VVSYS = 3.6V, TA = 25°C, unless otherwise specified.)
PARAMETER
TEST CONDITIONS
Input Voltage Range
UVLO Threshold Voltage
VSYS Rising
UVLO Hysteresis
VSYS Falling
VSYS Supply Current
ONx = VSYS
VSYS Shutdown Current
ONx = GA, Not Charging
Voltage Reference
Oscillator Frequency
Logic High Input Voltage
ON1, ON2, ON3, VSEL
Logic Low Input Voltage
ON1, ON2, ON3, VSEL
Leakage Current
VON1 = VON2 = VON3 = VVSEL = VnIRQ = VnRSTO = 4V
nPBIN Internal Pull-up Resistance
Low Level Output Voltage
nIRQ, nRSTO. Sinking 10mA
nRSTO Delay
Thermal Shutdown Temperature Temperature Rising
Thermal Shutdown Hysteresis
Temperature Decreasing
MIN
2.6
2.35
1.24
1.35
1.4
TYP MAX UNIT
5.5
V
2.5 2.6
V
100
mV
70
µA
30
µA
1.25 1.26 V
1.6 1.85 MHz
V
0.4
V
1
µA
50
k
0.3
V
260
ms
160
°C
20
°C
Innovative PowerTM
ActivePMUTM and ActivePathTM are trademarks of Active-Semi.
I2CTM is a trademark of NXP.
- 10 -
www.active-semi.com
Copyright © 2010 Active-Semi, Inc.

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