BAW56DW 查看數據表（PDF） - Willas Electronic Corp.

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BAW56DW

SOT-363 Plastic-Encapsulate Diode

Willas Electronic Corp. 

WILLAS

SO1.0TA-S3U6R3FAPCElaMsOUtiNcT-SECnHOcTaTpKYsBuAlRaRtIeERDREioCTdIFeIERS -20V- 200V

SOD-123+ PACKAGE

FM120-M+

BAW56DWTHRU

FM1200-M+

Pb Free Product

SWITCFHeINaGtuDrIOesDE

• Batch process design, excellent power dissipation offers

FEATURbEetSter reverse leakage current and thermal resistance.

• Low profile surface mounted application in order to

z Foaptsimt SizewbitocahridnsgpaScpee. ed

z • ULoltwrap-oSwmeralollsSs,uhrifgahceeffMicioenucnyt. Package

• High current capability, low forward voltage drop.

z • FHoigrhGsuerngee rcaalpPabuilriptyo. se Switching Applications

z • HGiugahrdCrinognfdour ocvtaernvcoeltage protection.

z • PUblt-rFa rheigeh-psapcekedagsweiticshainvga. ilable

• Silicon epitaxial planar chip, metal silicon junction.

• RLeoaHdS-frpereopdaurctst mfoerept aencvkiirnognmcoendtealssutaffnixda”rGd”s of

HMaILlo-SgTeDn-f1r9e5e0p0r/o2d28uct for packing code suffix “H”

z

•

RoHS product for packing code suffix "G"

MHoaliosgteunrefreSeepnrsoidtuivctitfyorLpeavcekiln1g code suffix

"H"

MAKINMG:eKcJhCanical data

Maxim•uEmpoRxyat: iUnLg9s4-@V0TraAt=e2d5fl℃ame retardant

• Case : Molded plastic, SOD-123H

•

Terminals

:Plated

termPianraalsm, seotldeerrable

per

,

MIL-STD-750

Peak Repetitive PeMaekthroedve2r0s2e6 voltage

Workin•gPPoleaariktyR: eInvdeircsaeteVdobltyacgaethode band

DC Blo•cMkionugntingVPooltsaigtieon : Any

Forwar•dWCeoignhttin: AuoppursoxCimurarteendt0.011 gram

Package outline

SOT-363

SOD-123H

0.146(3.7)

0.130(3.3)

0.012(0.3) Typ.

0.071(1.8)

0.056(1.4)

0.040(1.0)

0.024(0.6)

0.031(0.8) Typ.

Symbol

Limits

0.031(0.8) Typ.

Unit

VRRM

VRWM

VR

Dimensions in7in5ches and (millimetersV)

IFM

300

mA

Average RectiMfieAdXOIMutUpMut RCuArTreINnGt S AND ELECTRICAL CHARACTERISTIOICS

150

mA

NRoatnin-gRseapte2t5it℃iveaPmebaiekntFteomrwpearradtuSreuurngleesCs uorthreernwtise specified.@ t = 1.0µs

2

Single phase half wave, 60Hz, resistive of inductive load.

IFSM

@ t = 1.0s

1

A

For capacitive load, derate current by 20%

Power DissipationRATINGS

SYMBOL

FM120-MH

FM130-MH FM140-MHPFDM150-MH

200

FM160-MH FM180-MH

FM1100m-MWH FM1150-MH FM1200-MH

UN

MTahrekirnmg aCloRdeesistance Junction to Ambient Air

12

13

14 RθJA15

16 625 18

10℃/W 115

120

Maximum Recurrent Peak Reverse Voltage

MOapxeimraumtinRgMJSuVnocltatigoen Temperature

VRRM

20

30

40

50

60

80

100

150

200 Vol

VRMS

14

21

28 TJ 35

42 150 56

70 ℃ 105

140 Vol

MSatoxirmaugmeDteCmBlpoeckriantguVroeltage

VDC

20

30

40 TSTG50

60-55-15080

100 ℃ 150

200 Vol

Maximum Average Forward Rectified Current

IO

1.0

Am

EPLeaEkCFoTrwRaIrdCSAurLgeCCuHrrAenRt 8A.3 CmsTsEingRleIShaTlf IsCineS-w(aTveamIbFS=M25℃ unless otherwise specified) 30

Am

superimposed on rated load (JEDEC method)

Typical ThermaPl Raersaismtaentceer(Note 2)

RSΘyJmA bol

Test conditions

M4I0N

MAX

UNIT

℃/W

Typical Junction Capacitance (Note 1)

OpReeravteinrgsTeebmrpeearaktudroewRannvgeoltage

CJ

TVJ(BR) R

IR=-525.t5oµ+A125

120

PF

75

-55 to +150 V

℃

Storage Temperature Range

Reverse voltage leakage current

CHARACTERISTICS

TSTG

VR=75V

- 65 to +175

2.5

℃

IR

µA

SYMBOL FM120-MVHRF=M2103V0-MH FM140-MH FM150-MH FM160-MH FM180-M0H.0FM215100-MH FM1150-MH FM1200-MH UN

Maximum Forward Voltage at 1.0A DC

Maximum Average Reverse Current at @T A=25℃

RaFteodrwDCarBdlovcokilntgagVoeltage

@T A=125℃

VF

IR VF

IF=1mA 0.50

IF=10mA

IF=50mA

0.70

0.5

10

0.78155

855

1000

0.9

mV

0.92 Vol

mAm

NOTES:

1- JMueanscutreiodnatc1aMpHaZcaitnadnacpeplied reverse voltage of 4.0 VDC. CT

IF=150mA

VR=0, f=1MHz

1250

2

pF

2- Thermal Resistance From Junction to Ambient

Reveres recovery time

IF=IR=10mA,Irr=0.1×IR,

trr

RL=100Ω

4

nS

2012-06

2012-1

WILLAS ELECTRONIC CORP.

WILLAS ELECTRONIC CORP.

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